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Sputter thin film deposition after photolithography often produces unwantedspikes along the side edges. These spikes are a significant issue for thedevelopment of magnetic tunnel junction (MTJ)-based memory and molecularspintronics devices, microelectronics, and micro-electro-mechanical systemsbecause they influence the properties of the other films deposited on the top.Our molecular spintronics devices that utilize MTJ as the testbed are almostshort-lived and encountered high background current that masked the effect ofmolecular transport channels placed along the sides of MTJs. Therefore, taperedthin film edges are critically needed in devices. Here, we report a verycost-efficient and fast way of creating an optimum photoresist profile for theproduction of spike-free patterned films. This approach is based on performinga soaking in the photoresist developer after baking and before the UV exposure.However, the success of this method depends on multiple factors accounted forduring photolithography - photoresist thickness (spin speed), bakingtemperature, soaking time and exposure time. Our recent experimentssystematically studied the effect of these factors by following the L9experimental scheme of the Taguchi Design of the experiment (TDOE). Wediscovered that baking temperature was the most influential parameter; presoaktime and photoresist thickness were two other influential factors; exposuretime was the least effective factor. We also found that 4000 rpm, 100 C softbaking, 60 s soaking, and 15 s UV exposure yielded the best results. Finally,the paper also discusses the interdependence of selected factors, and theimpact of the individual levels of each factor. This study is expected tobenefit MEMS and micro/nanoelectronics device researchers because it attemptsat finding a cheaper and faster alternative to creating an optimum photoresistprofile.

Reduction of Spikes on the Sides of Patterned Thin Films for Magnetic Tunnel Junction Based Molecular Device Fabrication