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Using Sn-doped single crystal InSb thin films of 1.0 μm thickness grown on GaAs substrates by molecular beam epitaxy (MBE), we have developed new magneto-resistance (MR) devices with very small temperature dependence. Sn was doped to InSb films at the concentration from 7×10 cm to 1×10 cm. Temperature dependence of the resistance and the electron mobility of InSb films was extremely reduced by Sn-doping. MR devices were fabricated using the InSb films. Temperature dependence of the resistance and the resistance change (ΔR/R0) of the MR devices using the InSb films was also extremely reduced by Sn-doping as shown in Fig. 1. Resistance change (ΔR/R0) of the MR devices using the Sn-doped InSb films with the Sn concentration of 7×10 cm was about 260 % at the magnetic field of 0.5 T. Around the magnetic field of 0.4 ~ 0.5 T, the resistance changes linearly to the magnetic field, which can be applied to high sensitive magnetic sensors. The MR devices can be applied to the gear rotaion detection for magnetic encoders or automobile applications such as crank angular detection or cam angular detection. For example a rotation detecter for magnetic encoder can be fabricated putting two sets of MR devices into the same metal case, each set consisting of a Sn-doped InSb film MR chip with a SmCo magnet for magnetic field biasing, as shown in Fig. 2. Amplitude of the output voltage of the sensor to involute gear with the module of 0.8 was more than 500 mV at the distance between the gear and the InSb film of 0.65 mm at the input voltage of 5 V. Temperature and frequency properties of the rotation sensors were examined. Offset voltages change of the sensor was very small at the temperature range from 40 °C to 150 °C. (Temperature coefficient was –0.05 mV/°C.) Amplitude change of the output voltages was also small at the temperature range from 20 °C to 140 °C and at the frequency range from 4 Hz to 6.1 kHz. (Temperature coefficient was +0.02 mV/°C.) The distortion of the waveform of the output voltage was small. The rotation sensors with high accuracy for magnetic encoders could be developed practically. Similar sensors for automobile applications were also developed. Amplitude of the output voltages of the sensor to gear with the module of 0.2 was about 770 mV at the distance between the gear and the InSb film of 1mm at the input voltage of 5 V. The MR devices using single crystal Sn-doped InSb film is possible to be used for the accurate control of engine rotation.

Magneto-resistance Effect of Sn-doped InSb Single Crystal Thin Films and Application to Rotation Detection