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In the production process of semiconductor devices, such as plasma-enhanced chemical vapor deposition (PECVD) machines, pulses of a few kW at a radio frequency (RF) are required for high quality production. This RF pulse is generated by high-voltage (HV) and low-voltage (LV) pulses (high/low pulse). A DC–DC converter with a fast transient response is required to generate a high/low pulse voltage at a few kHz. The HV and LV levels of the steady state must satisfy the requirement of a fluctuation error, and very short rise and fall times are required during the transient state. Conventionally, the capacitance of the output capacitor of the DC– DC converter circuit was set to a large value (e.g. a few thousand μF) to maintain the output voltage stability. Consequently, it is reported that the maximum high/low pulse frequency becomes very low owing to the slow transient response . Therefore, a reduction in the output capacitance is necessary to enhance the high/low pulse output frequency. In this study, there are no concrete target values for PECVD applications. A current, iLref , deadbeat (DB) control was proposed , and its effectiveness was verified . It was shown that the rise time of 500 μs was experimentally observed for a voltage change from 50 to 150 V without overshoot. The experimental results of one sampling time DB control are shown . The concept of a half-sampling time DB control (half-cycle DB control) applied for a two-phase interleaved DC-DC buck converter was presented, and the simulation results are

ieej journal of industry applications

High Performance Transient Response of High/Low Pulse Voltage using Two-Phase Interleaved DC-DC Buck Converter under Half Sampling Time Deadbeat Control