English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Properties of a-SiGe films deposited by plasma CVD and their relation to plasma parameters Toshiaki Sasaki, Member and Yukimi Ichikawa, Member (Fuji Electric Corporate Research and Development., Ltd) Shinriki Teii, Member (Musashi Institute of Technology) Hydrogenated amorphous ilicon-germanium (a-SiGe:H) alloys have been attracting much attention in application to solar cells. Plasma CVD technique is widely used to deposit he a-SiGe films. Thus it is very important o understand the relationship among the film deposition conditions, the properties of films and the plasma parameters. In this study, SiH4-GeH4-H2 mixture gases were decomposed in a parallel plane electrode system with 13.56MHz radio frequency glow discharges. The plasma parameters uch as electron temperature and density were measured by floating double probe method. We studied a-SiGe films with an optical gap of 1.6eV, and the following results were obtained: a) Substrate temperature is the most important deposition parameter to improve the quality of a-SiGe film. b) Plasma parameters affect the film deposition rate, but influence on film quality is not large. c) "Ion damage" is small under the deposition conditions for obtaining device-grade a-SiGe films.