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ECR Plasma Anodization of Si Utilizing Several Different Types of Oxidizing Gas Koki Matsumura, Member (Gifu City Women's College) The formation of silicon oxide films by ECR plasma anodization, which is a low-temperature, dry anodizing method, with O2, N2O, and O3 gases is reported from a view point of improving the anodizing efficiency and the anodized film quality. The active oxidizing species in anodization of Si was identified by analyzing the spectra of ECR plasma emission: plasma atomic oxygens play an important role in the anodizing process because the oxide growth rate strongly depends on the density of plasma atomic oxygen. The XPS and AES analysis revealed that the as-grown silicon oxide films anodized with N2O and O3 gases are the stoichiometric SiO2 just as the silicon oxide film anodized in ECR plasma of O2 gas. It was also indicated that there exists a quite thin SiOx (0<x< 2) layer between SiO2 and Si, and that Si ions move across the layer to combine with negative oxygen ions at the SiO2 SiOx interface. From the C-V measurement of MOS capacitor fabricated with as-grown SiO2 film, it was observed that the value of interface state density is almost the same as that grown by thermal oxidation. The value of interface state density slightly depends on types of oxidizing gas or its conditions, possibly due to the sputtering by plasma charged particles.