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In this paper, the authors clarified effects of photocatalysis and decrease of electrical resistivity under UV irradiation on TiO2 thin films prepared under Ar+O2 atmosphere by RF magnetron sputtering method. From the result of XRD, thin films prepared under Ar+10˜50%O2 atmosphere formed structure of anatase, and films with structures of anatase and rutile were formed under Ar+60˜80%O2 atmosphere. For TiO2 thin films prepared at gas pressure of 3.0 Pa under Ar+40%O2 atmosphere, contact angle for water showed 9°under UV irradiation for 240 min. and decomposition rate of methylene blue showed -0.067 under UV irradiation for 120 min. Therefore, photocatalytic activity was the most excellent at gas pressure of 3.0 Pa under Ar+40%O2 atmosphere. Moreover, it revealed that electrical resistivity ρ for TiO2 thin films prepared under the same conditions changed from 8.0×103 Ω·m to 2.0×10-2 Ω·m under UV irradiation for 60 min. It clarified that effects of photocatalysis and decrease of electrical resistivity are considerably influenced by gas pressure in preparing TiO2 thin films.

Effects of Photocatalysis and Decrease of Electrical Resistivity under UV Irradiation on TiO2 Thin Films by RF Magnetron Sputtering Method