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Ge1−xSix solid solutions are one of promissing materials for semiconductor technique. However, their electrical and optical properties, especially with silicon content more than 5 at. % have been little studied. In particular, in the number of works [1-3] there have been presented the experimental results of study in the region 0.52 eV in germanium irradiated by fast electrons, gamma-rays and protons at the temperature of liquid nitrogen. In the literature, however, there are no data on studying the absorption band in the range 0.52 eV in Ge1−xSix solid solution irradiated by fast electrons.

Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge1−xSix irradiated by fast electrons at the temperature 77 K