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The high-planar epitaxial layers of n-Pb0.935Sn0.065Te0.243Se0.757 quaternary solid solutions, lattice matched with {111}BaF2 substrates, have been grown from bounded volume of supersaturated melt-solutions in the growth temperature region 773÷873 K by the liquid phase epitaxy technique at a programmatic refrigeration rate of 0.1÷0.2 K/min and a temperature reduction range of ∆T=5÷10 K. The laboratory methodology of the production of Cu/δ-layer/n-Pb0.935Sn0.065Te0.243Se0.757/In Schottky barrier structures by thermal vacuum deposition has been developed. The currentand farad-voltage characteristics of these structures have been measured at the 77 K, and the dependence of the diode electro-physical properties on the δ-layer width has been studied.

semiconductor physics, quantum electronics and optoelectronics/semiconductor physics quantum electronics and optoelectronics

Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/n-Pb0.935Sn0.065Te0.243Se0.757/In Schottky barrier structures