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Electrical properties of p-i-n-structures obtained with low-temperature oxygen and lithium diffusion into low-resistive n-CdTe substrates have been investigated. The role of generation-recombination processes as well as trapping, impact ionization and overbarrier carriers transport in the dark current formation of samples studies have been defined.

Current flow mechanisms in p-i-n­ structures based on cadmium telluride

Current flow mechanisms in p-i-n structures based on cadmium telluride