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InxGa1-xAs QW-layers embedded in GaAs matrix have been characterized by photo- luminescence (PL). The relation between the PL parameters and mismatch of the lattice param- eters of the layer and matrix was established. In highly strained layers several PL bands were observed instead one band. This is probably a result of alternating content of In raised only in highly strained layers.

Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa1-xAs/GaAs