English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

A new method to prepare vanadium oxide with a high temperature coefficient of resistance (TCR) and low resistance for uncooled micro-bolometers has been proposed. Amorphous vanadium oxide films with V2O3 phase inclusions have been fabricated on silicon and silica substrates at the temperature 200 °C by using the direct current reactive magnetron sputtering method in controlled Ar/O2 atmosphere. Additional oxygen ion implantation in the deposited films allows to synthesize vanadium oxide with crystalline inclusions of VO2 and V2O5 phases under the low temperature annealing. The following long low-temperature annealing provides formation of VOx (at x  2) film with the TCR close to 7.0%/°C.

Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient