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In the last few years the contacts based on inclusion phases are more often used for solving the problem of thermal reliability of gallium arsenic diodes with Schottky barrier. The main advantage of these contacts is the absence of interaction between the components of the contact metal-GaAs up to very high temperatures. TiB x films are typically used for metallization of this type. The TiB x layers with a reproducible and controllable composition are obtained using the magnetron sputtering technique [1-3]. However, despite a great amount of information about TiB x f lms and their modifications, the studies of thermal stability of these objects in the contacts TiB x-GaAs are practically absent. In this paper the thermal stability of parameters of Schottky barriers Au-Mo-TiBx-GaAs has been investigated by structural and electrophysical techniques.

Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs