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We studied ohmic contacts Au-Pd-Ti-Pd-n-AlN and Au-TiB2-Al-Ti-n-GaN with contact resistivity ρс = 0.18 cm 2 and 2 4 cm 10 6 . 1     , respectively, and the effect of microwave treatment on their electrophysical properties. After microwave treatment for time t up to 1000 s, the contact resistivity dropped by 16% (60%) in the contact to AlN (GaN). This seems to result from increase of the number of structural defects in the semiconductor near-contact region caused by relaxation of intrinsic stresses induced by microwave radiation.

Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN