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We studied temperature dependences of the resistivity,   T c  , of Pd-Ti-Pd-Au ohmic contacts to wide-gap semiconductors GaN  n and AlN  n with a high dislocation density. Both   T c  curves have portions of exponential decrease, as well as those with very slight   T c  dependence at higher temperatures. Besides, the Au-Pd-TiPd-n-GaN contacts have a portion of   T c  flattening out in the low-temperature region. This portion appears only after rapid thermal annealing (RTA). In principle, its appearance may be caused by preliminary heavy doping of the near-contact region with a shallow donor impurity as well as doping in the course of contact formation owing to RTA, if the contact-forming layer involves a material atoms of which serve as shallow donors in N III  compounds. The obtained   T c  dependences cannot be explained by the existing mechanisms of current transfer. We propose other mechanisms explaining the experimental   T c  curves for ohmic contacts to GaN  n and AlN  n .

Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density