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n-InS/p-InSe heterojunctions were obtained by annealing p-InSe samples in sulphur vapours. By means of the atomic force microscopy method, topology of InS film surface was investigated. Current-voltage characteristics of the heterojunction were measured, and principal mechanisms of charge transfer were established. The spectrum of relative quantum efficiency of the heterojunction was measured.

Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe