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The influence of γ-irradiation ( n , the mobility is shown to grow anomalously with the irradiation dose in the region of combined scattering of carriers. Proposed in this paper is the model based on accounting partial neutralization of charge of scattering centers by charge of radiation defects produced mainly around the scattering centers. This model qualitatively explains the experimental data.

Influence of γ-irradiation (60Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type