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In this work, the gettering process in the multicrystalline Si wafers by the combined getter structures of the porous Si and Al layers during annealings at temperatures 600 up to 750 °C has been theoretically studied. A kinetic model based on the diffusion equation has been developed, and the characteristics of increase in the minority charge carrier diffusion length as a result of gettering annealings have been determined. The obtained results are useful for technology of multicrystalline Si solar cells to improve their properties.

Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters