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The investigation of heat conductivity in the elements of microelectronic devices contributes to better understanding of a number of microprocesses that take place in them and are related to the movement and dissipation of elementary particles. None of the transfer phenomena provides such rich and deep information about lattice vibrations, about the excited states of electrons, about the interaction of electrons with lattice in semiconductors, as thermal conductivity does. In microelectronic device elements, where electric current flows, nonhomogeneous heat release always takes place, and in some cases large temperature gradients arise. Therefore, the performance of microelectronic devices strongly depends on the temperature regimes imposed during heating process. This is especially significant in devices, where the thin-film layers and the foreign inclusion are applied. Some researches of the temperature regimes for separate elements of microelectronic devices have been conducted earlier [1-4]. Hereinafter the boundary steady-state thermal conductivity problem has been formulated, the analytical solution and the numerical analysis for the element of microelectronic device, which is described by an isotropic layer with thin parallelepipedic inclusion that releases heat and by heat dissipation. The general thermal conductivity equation for piecewise homogeneous structures has been presented [5, 6]. 2. Problem statement

Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices