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We have estimated the frequency characteristics of a photodiode determined by the motion of charge carriers in the space-charge region on the surface generation of carriers in two extreme cases of unalloyed and evenly alloyed semiconductors. The expressions allowing the comparison of photodiodes with different constructions have been obtained.

semiconductor physics, quantum electronics and optoelectronics/semiconductor physics quantum electronics and optoelectronics

Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the space charge region on the surface generation of carriers