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To study the influence of microwave irradiation on a spectrum of defect states in porous InP, we have measured the luminescence spectra within the range 0.50 to 2.04 eV at 77 K before and after short and long (up to 600 s) treatments in air in the operation chamber of a magnetron at a frequency of 2.45 GHz and a surface power density of 7.5 W/cm. We have obtained that the spectra of defects in researched samples are essentially changed as well as the concentrations of local centers. Possible mechanisms of observable changes in the semiconductor impurity-defect composition caused by a microwave treatment are discussed.

Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers