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By the methods of materials science, the effect of intermediate Cu layer with low surface energy (1.83 J/m) (top, intermediate, and underlayer) in [Fe50Pt50(15 nm)/intermediate Cu(7.5 nm) layer/Fe50Pt50 (15 nm)]n (where n   1, 2), top Cu(7.5 nm) layer/Fe50Pt50(15 nm) and Fe50Pt50(15 nm)/underlayer Cu(7.5 nm) film compositions on SiO2(100 nm)/Si(001) substrates on diffusion phase-formation processes and L10 phase formation, its structure, and magnetic properties at annealing in vacuum is studied. The film compositions are prepared by magnetron sputtering on thermally oxidized SiO2 layer by thickness of 100 nm on monocrystalline Si(001) substrate. Subsequent heat treatment is carried out at high vacuum of 1.3103 Pa in the 300—900С temperature range during 30 s at each temperature. As determined, the chemically disordered A1(FePt) phase is formed in all as-deposited films. The formation of chemically ordered L10(FePt) phase in [Fe50Pt50(15 nm)/Сu(7.5 nm) intermediate layer/Fe50Pt50(15 nm)]n films (where n  1, 2) with intermediate layers takes place during annealing at 700С and is accompanied by sharp coercivity increase, which also rises after subsequent high-temperature annealing. In the films with top copper layer, the temperature of L10(FePt) phase formation rises up to 900С. In the films with copper underlayer, the formation of L10(FePt) phase is not detected by X-ray analysis, but small coercivity increasing after annealing within the temperature range of 800—900C can testify that ordering processes proceed.

Influence of Copper on $А1$ to $L1_{0}$ Phase Transformation in Nanoscale Fe$_{50}$Pt$_{50}$ Films