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The crystal-quasichemical formulas were proposed in paper. There were obtain the dominant point defects of Pb 1-x Cd x Те solid solutions on the base of initial binary solutions PbТе and CdTe of the n- and р-type of conductivity. The dependence of defect concentrations, such as charge carriers and Hall’s concentration due composition of solid solutions were calculated.

Engineering of Point Defects and Formation Mechanisms of PbTe–CdTe Solid Solutions