English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

The reaction kinetics of ground state Si atoms was studied behind reflected shock waves in the presence of excess CH 4  and CH 3 , respectively. The very fast Si atom formation by the thermal decomposition of SiH 4  and Si 2 H 6  was used as a reliable Si atom source at temperatures  T &gt;1550 K. CH 3  was formed by the thermal decomposition of different source gases like CH 3 Cl and CH 3 I. All test gases were highly diluted in argon. The atomic resonance absorption spectroscopy (ARAS) was applied for time-resolved measurements of Si and H atoms and it was found that the reaction of Si atoms with CH 4  (R1) is much slower than the reaction of Si atoms with CH 3  (R2) which seems to be an important reaction leading to the formation of very reactive intermediate species on its way to form SiC. The product channels are discussed and a temperature independent mean rate coefficient for (R2) was determined:

Shock Tube Study on the Reaction of Si Atoms with CH 3 with Respect to SiC Formation