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We studied the structural and optical properties of In  x  Ga 1–   x  N/GaN multiple quantum wells (MQWs) on Si(111) grown by metal organic vapor phase epitaxy by means of photoluminescence, X-ray reflectometry (XRR), and high resolution X-ray diffractometry (HRXRD). The combination of both X-ray analysis methods allows a very precise determination of the structural parameters of the layer systems. In particular, the Indium incorporation and the well thickness of the optically active layers were investigated. Thus, in dependence on crystallographic quality and thicknesses, their error bars of determined values could be reduced to an accuracy of lower than 0.2 nm of well thickness and Δ x  = 0.02 of Indium proportion. By growing systematic series with various MOVPE deposition temperatures and times the correlations to the optical properties were determined.

zeitschrift für kristallographie - crystalline materials

Exact determination of Indium incorporation in (In  x  Ga 1–   x  N/GaN)-multiple quantum well structures by X-ray diffraction and -reflectivity and its impact on optical properties