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The effect of a third type of B-site cation on the temperature- and pressure-induced structural changes in ABO 3 -type relaxors has been studied by in-situ Raman scattering and X-ray diffraction on 0.72PbSc 0.5 Ta 0.5 O 3 —0.28PbSc 0.5 Nb 0.5 O 3  (PSTN) and 0.78PbSc 0.5 Ta 0.5 O 3 —0.22PbSnO 3  (PSTS). The incorporation of Nb into the PST matrix is an isovalent substitution for Ta 5+  on the ferroelectrically active B-site, whereas the incorporation of Sn 4+  is a coupled aliovalent substitution for both types of B-cations in the host system. Both PSTN and PSTS exhibit the characteristic temperature  T *, which for PSTS is shifted to slightly lower temperatures. The incorporation of Nb and Sn into the PST matrix smears the transformation processes near and below  T * and suppresses the ferroelectric long-range order at low temperatures. Both PSTN and PSTS exhibit a continuous pressure-induced phase transition. The high-pressure phases have the same structural features as for pure PST: suppressed B-cation off-centre shifts, enhancement of coupled Pb—O ferroic species, and long-range order of anti-phase tilts of the BO 6  octahedra. Nb-doping shifts the critical pressure  p  c  from 1.9 GPa for pure PST to 2.5 GPa, whereas Sn-doping lowers  p  c  to 1.3 GPa. The incorporation of both Nb and Sn decreases the degree of the overall pressure-induced structural distortion, with the effect of Sn being more pronounced than Nb. The dilution of the B-site cation system with Sn 4+  results in local electric and elastic fields which reduce the coherence between nanoregions with anti-phase octahedral tilting and shifts the pressure at which long-range order of the tilts occurs to ∼4 GPa.

Transformation processes in relaxor ferroelectric PbSc 0.5 Ta 0.5 O 3 heavily doped with Nb and Sn