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The binary rare-earth metal silicides RESi 1.7  (RE = Dy, Ho) were prepared by tin flux synthesis between 800–1000 °C. Single crystals were obtained after electrochemical dissolving of molten ingots. Their crystal structures were determined from single-crystal X-ray data: orthorhombic symmetry, space group  Imm 2; unit cell parameters  a  = 19.144(1),  b  = 8.2562(3),  c  = 6.6571(3) Å and  a  = 19.063(1),  b  = 8.2120(2),  c  = 6.6313(2) Å for DySi 1.7  and HoSi 1.7 , respectively. They represent a new ordered structure type, which is a derivative of the defect AlB 2  type. The main structural feature is the occurrence of a vacancy ordering in the two-dimensional planar network of silicon atoms, leading to rows of edge-shared twelve-membered rings separated by distorted hexagonal rings. Structural comparison with the parent hexagonal silicide Yb 3 Si 5  (Th 3 Pd 5  type), the structure of which has been re-determined on single crystal, is also given.

Tin flux synthesis of rare-earth metal silicide compounds RESi 1.7 (RE = Dy, Ho): a novel ordered structure derived from the AlB 2 type