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The structure of InMO 3 (ZnO)  m   (M = In, Fe, Ga, and Al;  m  = integer) is built from InO 2  1−  (In–O) and MZn  m  ,O  m +1  1 m   (M/Zn–O) layers stacked alternately. A modulated structure of these compounds results from the ordering of M ions in the M/Zn–O layers. The modulated structures of InMO 3 (ZnO) 13  (M = In 0.5 A 0.5 ; A = Fe, Ga, and Al), a solid solution of InInO 3 (ZnO) 13  and InMO 3 (ZnO) 13  (M =Fe, Ga, and Al), have been studied by high-resolution electron microscopy. The main and satellite spots of the electron diffraction patterns are indexed as  ha * +  kb * +  lc * +  mq  by using the four dimensional superspace group approach. Based on the crystal system of the basic structure and the modulation wave vector  q , the electron diffraction patterns are classified according to three categories with typical parameters: (1) monoclinic unit cell of  a  = 0.57 nm,  b  = 0.33 nm,  c  = 4.0 nm,  β  = 93° and  q  =  b */18.1; (2) monoclinic unit cell of  a  = 0.57 nm,  b  = 0.33 nm,  c  = 4.0 nm,  β  = 93°, and  q  =  b */22.5 +  c */2; (3) triclinic unit cell of  a  = 0.57 nm,  b  = 0.33 nm,  c  = 4.0 nm,  α  = 95°,  β  = 95°,  γ  = 30°, and  q  =  a */12.1 +  b */18.1 +  c */32.3. Among these, the first is the same as that of their constituent compounds In 2 O 3 (ZnO) 13  and InMO 3 (ZnO) 13  (M = Fe, and Ga), while the second and the third are different. In high-resolution image, the modulated structure appears as zig-zag contrast within the M/Zn–O layers. The periodicity of this zig-zag contrast along the M/Zn–O layer in InMO 3 (ZnO) 13  (M = In 0.5 A 0.5 ; A = Fe, Ga, and Al) is between those of InInO 3 (ZnO) 13  and InMO 3 (ZnO) 13  (M = Fe, Ga, and Al).

zeitschrift für kristallographie - crystalline materials

High-resolution electron microscopy of a modulated structure in InMO 3 (ZnO)  m   (M = In, Fe, Ga, and Al;  m  = integer): effect of solid solution formation