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An investigation of the surface profile of epitaxial In 1-x Ga x As layers deposited upon (001) InP substrates has been carried out by means of optical goniometry and electron microscopy. From structure geometry the slope of grooves observed is related to simultaneous slip processes on (111) and ([unk]1) planes inclined to the layer/substrate interface. A quasihomogeneous shear mechanism is proposed to describe slope angles different from 54.73°.

Surface corrugations on strained In 1-x Ga x As epitaxial layers due to multiplex slip