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This paper rewievs the modeling of magnetic field sensor microsystems with respect to the origins of offsets. We cover the modeling of silicon-based semiconductor Hall sensors in an inhomogeneous magnetic field, including 3D transport effects. In particular we discuss the automatic geometric optimization of sensor devices. The optimization strategy achieves offset reduction with simultaneous maximazation of device sensitivity. The topology optimization method changes the conductivity of a Hall plate locally, converging to an optimum conduction geometry. After showing representative results, we discuss currently available commercial and experimental software tools and their capabilities.

Numerical Offset Optimization of Magnetic Field Sensor Microsystems (Numerische Offsetverminderung in Magnetfeld-Mikrosensoren)