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II–VI semiconductors, owing to the availability of a large variety of techniques to prepare it, the large number of structures and nanostructures in which it can be condensed, as well as the large and varied number of industrial applications [13]. ZnO has a wurtzite structure in which the oxygen atoms are arranged in a hexagonal-close-packed lattice with zinc atoms occupying half the tetrahedral sites. This is a very well known semiconductor with a wide band gap in the near ultraviolet of ~ 3.37 eV at room temperature [14]. Cadmium oxide (CdO) is also a well-known II–VI n-type semiconductor that has interesting properties for optoelectronic applications due to its large band gap, low electrical resistivity and high optical transmittance in the visible region of the solar spectrum [15]. It can be found in various types of nano structures with a variety of properties and applications such as UV and visible photoluminescence, photo catalysts and field emission, ambient temperature ferromagnetism and high electronic mobility [16] as well as photo detectors, solar cells, piezoelectric devices [17]. It has been well studied as a sensor material to detect most of the reducing gases [18]. CdO has a rock salt crystal structure with a direct band gap of 2.2 eV to 2.5 eV and indirect band gap of 1.98 eV, which makes it useful for a wide range of applications such as solar cells, photodiodes, and transparent electrodes and sensors [19-22]. These interesting materials have been synthesized by various techniques, including electrode position, molecular beam epitaxy [23], sol–gel [24], thermal decomposition technique [25], pulsed laser deposition [26], spray pyrolysis [27], magnetron sputtering [28] and ultrasonic spray pyrolysis (USP) techniques [29]. In the present work we have done a comparative study of transports properties of ZnO-CdO thin films synthesis by sol-gel, magnetron sputtering and spray pyrolisis techniques.

Comparative Study of Synthesis of CdO-ZnO Nanocomposite Thin Films by Different Methods: A Review