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An inventive analytical model for a dual material gate-all-around tunnel FET with possible applications in biosensors is described in this study. The semiconductor device considered in this study has a gate-all-around configuration built with two distinct materials. Short-channel effects are avoided with the help of the surrounding gate to achieve flexibility. A breakthrough dual-material design with a nanocavity has been developed to render it viable for biosensing applications. To figure out Poisson’s equation and to derive its surface potential, the Finite Differentiation Method is used in this work. The electric field, subthreshold swing, drain current, and threshold voltage of the suggested structure are then determined using this potential. Furthermore, the device’s biosensor sensitivity is examined and the results are verified by two-dimensional TCAD simulations.

Examining the design characteristics of a dual-material gate all-around tunnel FET for use in biosensing applications