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Thin film CuGaSe 2  solar cells were prepared from the elements using electrochemical deposition of Ga from an alkaline bath. Sputtered copper layers with a small gallium content (Cu 0.86 Ga 0.14 ) on Mo/soda-lime glass served as a substrate. Subsequent reactive annealing of the thus created Cu/Ga precursor layer with selenium vapour yielded CuGaSe 2 . Chalcopyrite phase formation was studied with XRD, micro-Raman spectroscopy, SEM-EDX and Auger electron spectroscopy. It was concluded from these measurements that the binary phases Cu 2 Se and Ga 2 Se 3  are generated prior to the formation of the favoured CuGaSe 2  phase. Complete solar cell structures were fabricated by chemical bath deposition of CdS and chemical vapour deposition of ZnO onto the CuGaSe 2  absorber layer. Promising 3.2% efficiency with U oc  = 542 mV, I sc  = 12.0 mA/cm 2  and FF = 0.49 were achieved, proving that electrochemical gallium deposition from an aqueous bath can contribute to the efficient thin film processing of chalcopyrite solar cells.

Preparation of CuGaSe 2 Thin Film Solar Cells Comprising an Electrochemical Gallium Deposition Step