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A blue emitter of Er 3+  ions doped a host glass of a chemical composition 30B 2 O 3 –30Bi 2 O 3 –20Li 2 O–10BaO–10PbO was fabricated to be used in optoelectronics devices. Four proposed concentrations of Er 2 O 3 , which are 0.5, 1, 2, and 4 mol%, were suggested to study the impact of Er 3+  ions on the structural, thermal, and photoluminescence properties of the considered host glass, respectively. The phase checking of the produced glasses using X-ray diffraction patterns showed the amorphicity phase formation. Impact of Er 3+  ions on the structural properties of the considered host glass network was extensively studied through the occurred variations in XRD patterns, density and density-based parameters, and FTIR spectra. Thermally, the considered glasses have high thermal stability and high glass formability. Optically, the optical band gap, which ranged between 2.18 and 2.56 eV, signifies that the considered glasses have a semiconducting nature. Under 540 nm excitation wavelength, three bands were emitted in the blue region at 450, 462, and 486 nm and two in the violet region at 412 and 427 nm. Chromaticity analysis through CIE 1931 chromaticity diagram showed a strong blue light emission from the produced glasses. The blue light color purity of the considered glasses ranged between 90.887 and 92.324 %. Hence, the considered glasses have suitable characteristics that make them a good choice as blue light-emitting diodes in the optoelectronics devices.

Blue light-emitting diode of Er 3+ -doped borate glass for optoelectronics devices