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Thin films of zinc doped aluminum antimonide (Zn:AlSb) have been dumped on glass substrate using chemical bath deposition method. The morphological, structural, as well as optical properties of deposited thin films are investigated using XRD, optical microscopy, and UV-V is spectroscopy along with four-point probe technique. The XRD results exhibit that Zn is doped in AlSb and maximum grain size has been obtained at 4% Zn-concentration. Optical micrographs of pure and zinc doped aluminum antimonide (AlSb) at different concentrations of Zn have been shown to confirm the doping by observing changes in morphology and it has been observed that optimized films of AlSb are obtained at 4% of Zn-content. The optical bandgap of Zn doped AlSb films at varying concentrations of 0%, 1%, 2%, 3% and 4% has been found to decrease with enhancement in Zn-concentration and values are measured as 1.8, 1.7, 1.6, 1.4, and 1.3 eV respectively. The sheet resistivity also depends on Zn-content and has been observed to decrease as AlSb is doped with Zn, indicating an increase in electrical conductivity. The explored results indicate a significant potential of these deposited thin films to be used in photonics, photocatalysis, and energy industry.

Synthesis and characterization of Zn doped AlSb thin films for photovoltaic and energy applications