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A stable multilayer n-type silicon photoanode is produced by evaporating or sputtering a thin nickel film on the silicon surface and subsequently annealing in argon atmosphere. Its properties are investigated under various conditions. Under irradiation with intense light at a constant potential, no appreciable decrease of the photocurrent was observed during a period of 100 hours, while oxygen gas was evolved. The action spectra of this photoanode, measured under different potentials, showed that its absorption extends in a broad region.

Testing of Stability and Spectroscopic Response of NiO(OH)/Ni 2 Si/n + /n-Si-Photoanode