English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Dislocation structures in S-and N-doped homoepitaxial layers on GaP wafers are studied by high voltage electron microscopy. Many dislocations are introduced in the epilayer, even if the substrate is nearly dislocation free. The origins of the dislocations in this case are the microdefects, especially the perfect dislocation loops in the substrate. Dislocation dipoles are induced by dis-location half loops appearing at the epi-substrate interface and are classified into three types, two of which are concerned with the interactions of two dipoles in the epilayer, each interaction yielding a screw dislocation segment. The third type of dipole does not extend into the epilayer so far, but terminates and forms an elongated dislocation loop. The interactions and the terminations of dipoles decrease the density of the induced dislocations in proportion to the distances from the interface. The screw dislocations generated by the dipole interactions relax the torsional lattice distortion of the epilayer caused by dopant materials.

Dislocations in Homoepitaxial Layers on "Dislocation Free" LEC-GaP Substrates