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From phenomenological equations for the electric resistance and the electron and hole mobilities, the intrinsic carrier concentration is calculated (n i  = 1.02 · 10 10  cm -3  at T = 300 K) and its temperature dependence is derived. Correlation with a well-known quantum-statistical equation delivers the temperature dependence of the density-of-states effective masses.

Die Temperaturabhangigkeit der elektronischen Kenngrofien des eigenleitenden Siliciums