English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

The pulse rise times of an n-type silicon surface barrier detector were measured at 4.2 °K. At this temperature the detector was fully depleted even at very low bias and the measured pulse rise times gave direct information about the driftvelocity and the mobility. Instead of E -0.5 , an E -0.8  dependence of the mobility at moderate electric fields was found. At high electric fields agreement exists with theory.

zeitschrift für naturforschung a

Driftgeschwindigkeit und Beweglichkeit von Elektronen in Silicium bei 4,2 °K in Abhängigkeit vom elektrischen Feld / Driftvelocity and Mobility of Electrons in Silicon at 4.2 °K in Dependence of Electric Field