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Using the formerly described nondestructive method for contactless measuring electric resistances, the film in question is brought in parallel position to a metalplate. The reactance 1/Z of this arrangement is a function of (ω R ⃞  C), the product of measuring frequency, resistance per unit area of the film and capacity of the arrangement. With decreasing ω or R the imaginary part of 1/Z rises from 0 to C while the real part passes through a distinct maximum for K=(ω R ⃞  C)max·K depends strongly on the geometry of the film. Exact knowledge of K with known ω and C al-lows to determine R ⃞  . Therefore 1/Z has been calculated as function of (ω R ⃞  C) for the most usual geometries of thin films.

zeitschrift für naturforschung a

Zur kontaktlosen Messung des elektrischen Widerstandes dünner Schichten. Berechnung des Einflusses der Schichtgeometrie / Contactless measuring of the electric resistance of tnin films. Calculation of the influence of filmgeometry