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The Ce-substituted bismuth titanate (Bi 4  Ti 3  O 12 ) ferroelectric thin films were prepared on Pt/Ti/SiO 2 /Si substrates by sol-gel method and annealed at 700°C. The Bi-layered perovskite (with Ce substitution for Bi) single phase films were obtained and the thickness was 500 nm. At 12 V amplitude and 1000 Hz frequency, ferroelectric tests results showed a hysteresis loop with remnant polarization (2Pr) and coercive field values (2Ec) of 9.86 μC/cm 2  and 208 kV/cm, respectively. The structure and lattice parameters were analyzed by X-ray diffraction (XRD). The results showed that by increasing Ce substitution the ratio of a/c, the ferroelectric properties, increased when the Ce-substitution of 0.6, a and c values were 5.40734 Å and 5.3559 Å, respectively. The a-axis highly oriented structure may have influenced the remnant polarization and coercive field values of the films obtained.

Morphology and ferroelectric properties of Ce-substituted Bi 4 Ti 3 O 12 thin films prepared by sol-gel method