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The γ-Al 2 O 3  and Ce 3+ Cu 2+ -doped γ-Al 2 O 3  powders have been synthesized by sol-gel method. Phases of the synthesized powders were characterized with X-ray diffraction. Morphological analysis and elemental composition of the samples were determined by scanning electron microscopy, high-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy. Luminescence characterizations have been used to study the synthesized samples.  Ab initio  calculations by the use of local density approximation with the Hubbard  U  correlation were used to compute the structural, electronic and optical properties of γ-Al 2 O 3  and Al 2 O 3 :Ce 3+ Cu 2+ . The results indicate that the particle size and morphology of the samples depend on the concentration of the dopants. In comparison with undoped γ-Al 2 O 3  sample, the intensities of emission peaks at 430 and 458 nm of Ce 3+ Cu 2+ -doped γ-Al 2 O 3  powders have been enhanced. This shows that, increasing Ce 3+  and Cu 2+  concentration causes an increase in the number of emitting ions which is expected in order to increase the number of applications of γ-Al 2 O 3 :Ce 3+ Cu 2+  composite powders. The photoluminescence spectrum detected atλ   $\lambda$ex = 253 nm shows a new peak located at 549 nm due to Cu 2+  ions. This was confirmed computationally when the Ce_4f and Ce_5d states are found in the conduction band while the Cu_4p state was found at conduction band minimum and Cu_3d state at valence band maximum. This location of states showed there is no possible luminescence from the Ce 3+  ions. The only possible luminescence was due to transition from Cu_4p to Cu_3d states.

physical sciences reviews

γ-Al 2 O 3 :Ce 3+ Cu 2+  as a phosphor material; DFT+ U  and experimental approach: γ-Al 2 O 3 :Ce 3+ Cu 2+  industrial applications in optical components