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The objective of this work is to use techniques such as Raman analysis and Raman mapping to confirm that graphene-based polyvinylidene fluoride (PVDF) composites can be used in strain sensing industrial applications. The  I  d / I  g  ratio is used to predict the defect level of unstrained graphene-PVDF films with respect to strained graphene-PVDF films. By analyzing the intensity variations of band in the spectra, the defect level present in strained graphene-PVDF films compared with that of unstrained graphene-PVDF films can be predicted. Area mapping is also conducted to correlate the defect variation between unstrained and strained graphene-PVDF films. Raman results were compared with defect level and in turn with induced strain. As expected, results are in concurrence with one another, thereby providing complementary and confirmatory analysis of the results to measure strain.

Nondestructive evaluation of graphene-based strain sensor using Raman analysis and Raman mapping