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Spectroscopic ellipsometry study on spin-coated non-toxic Ge 25 S 75  thin films annealed at different temperatures were conducted. Multi sample analysis with two sets of samples spin-coated onto soda-lime glass and onto silicon wafers was utilized. Optical constants (refractive index  n  and extinction coefficient  k ) of these films were determined from ellipsometric data recorded over a wide spectral range (0.05–6 eV). Different parametrization of Ge 25 S 75  complex dielectric permittivity which consists of a Tauc-Lorentz or Cody-Lorentz oscillator describing the short wavelength absorption edge, a Lorentz or Gauss oscillators describing phonon absorption or optically active absorption of alkyl ammonium germanium salts in the middle infrared part of spectra is discussed. Using a Mott-Davis model, the decrease in local disorder with increasing annealing temperature is quantified from the short wavelength absorption edge onset. Using the Wemple-DiDomenico single oscillator model for the transparent part of the optical constants spectra, a decrease in the centroid distance of the valence and conduction bands with increasing annealing temperature is shown and increase in intensity of the inter-band optical transition due to annealing temperature occurs. Intensity of absorption near 3000 cm −1  could be used as alternative method to evaluation of quality of prepared films.

Spectroscopic ellipsometry characterization of spin-coated Ge 25 S 75 chalcogenide thin films