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20BaO·5ZnO·5Fe 2 O 3 ·70V 2 O 5  glass annealed at 450°C for 30 min showed a marked decrease in the electric resistivity ( ρ ) from 4.0×10 5  to 4.8 Ωcm, while 20BaO·5Cu 2 O·5Fe 2 O 3 ·70V 2 O 5  glass from 2.0×10 5  to 5.0 Ωcm. As for the conduction mechanism, it proved that  n-type semiconductor model  in conjugation with the  small polaron hopping theory  was most probable. Since Zn II  and Cu I  have a 3d 10 -electron configuration in the outer-most orbital, Ga 2 O 3 - and GeO 2 -containing vanadate glasses were explored in this study. 20BaO·5Ga 2 O 3 ·5Fe 2 O 3 ·70V 2 O 5  glass showed a less remarkable decrease of  ρ  from 4.5×10 5  to 100 Ωcm, and 20BaO·5GeO 2 ·5Fe 2 O 3 ·70V 2 O 5  glass from 3.3×10 6  to 400 Ωcm. Activation energies for the conduction ( E  a ) of GeO 2 - and Ga 2 O 3 -contaning glasses before the annealing were respectively estimated to be 0.42 and 0.41 eV. It proved that barium iron vanadate glass with a smaller  E  a  value could attain the higher conductivity after the annealing at temperaures higher than the crystalization temperature.

Highly conductive barium iron vanadate glass containing different metal oxides