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Indium tin oxide (ITO) is the most important transparent conducting electrode to date and the candidate for ultrafast signal processing in telecommunication region. ITO is normally selectively removed in a multiple-steps process for device application. In this work, we aimed to study single pulse removal of ITO-coated glass and PET by using a nanosecond (ns) laser (266 nm) and a femtosecond (fs) laser (1,025 nm) where each process is dominated by either linear or nonlinear process. For ns laser, ITO was removed from PET substrate at 0.01 J/cm 2 . Detachment likely occurred via thermal-induced process because of the high absorption by both ITO and PET and the thermomechanical properties of PET. At higher laser fluence (∼0.04 J/cm 2 ), the ITO films on both substrates were damaged, and at 1.34 J/cm 2 , ITO was ablated from the glass substrate. For fs laser removal via nonlinear process, ITO was removed from PET substrate at 0.3 J/cm 2 , but at 0.8 J/cm 2 , the PET substrate was also modified. ITO layer was partially removed from glass substrate by fs laser pulse at 0.3 J/cm 2  and full removal only occurred at 1.7 J/cm 2 . Thus, the fluence range for single fs pulse removal of ITO/PET was 0.3–0.8 J/cm 2  and &gt;1.7 J/cm 2  for ITO/glass.

Single pulse laser removal of indium tin oxide film on glass and polyethylene terephthalate by nanosecond and femtosecond laser