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Phase-change probe memory has been extensively regarded as one of the most prospective candidates to satisfy the recording density requirement from the incoming age of big data. However, in spite of recent advances, the energy consumption of phase-change probe memory still remains fairly high due to the use of the diamond-like carbon bottom electrode usually having a relatively high electric resistivity. In this case, the possibility of using titanium nitride to replace the diamond-like carbon as the electrode materials is investigated in this paper. The thickness and time-dependent resistivity of titanium nitride film is measured, allowing for a more conductive characteristic and a better stability than diamond-like carbon film at the same condition. Consequently, the writing of crystalline bit using the previously designed phase-change probe memory architecture but with titanium nitride bottom electrode is performed experimentally, and results show that using titanium nitride as bottom electrode would enable an achievement of ultra-high recording density with lower energy consumption than the phase-change stack with diamond-like carbon electrode.

Towards low energy consumption data storage era using phase-change probe memory with TiN bottom electrode