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Bilayer graphene (BLG) grown via chemical vapor deposition (CVD) tends to exhibit twisted stacking. The twist angle  θ   t  in twisted BLG (tBLG) provides a new degree of freedom for engineering its electronic and optical properties. In this paper, we investigate the  θ   t -dependent optical absorption in tBLG and deeply understand the electronic structure-optical properties correlations. New absorption peaks, whose wavelengths are modified by  θ   t , are observed on the feature of optical contrast (OC) in tBLG. Under the corresponding energy excitation, the Raman G mode in tBLG exhibits a significant enhancement. Furthermore, the results of  θ   t  obtained by OC absorption peak are verified to be consistent with those by the Raman R mode. All these properties are proved to be related to the energy difference between low-energy Van Hove singularities ( E   VHS ) in the density of states of tBLGs. This work builds a relation between optical absorption and twist angle, providing a viable method to identifying twist angles in tBLGs.

Twist angle dependent absorption feature induced by interlayer rotations in CVD bilayer graphene