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The performance of a graphene/Ge Schottky junction near-infrared photodetector is significantly enhanced by inserting a thin Al 2 O 3  interfacial layer between graphene and Ge. Dark current is reduced by two orders of magnitudes, and the specific detectivity is improved to 1.9 × 10 10  cm ⋅ Hz 1/2 W −1 . The responsivity is improved to 1.2 AW −1  with an interfacial layer from 0.5 AW −1  of the reference devices. The normalized photo-to-dark current ratio is improved to 4.3 × 10 7  W −1  at a wavelength of 1550 nm, which is 10–100 times higher than those of other Ge photodetectors.

Highly responsive near-infrared photodetector with low dark current using graphene/germanium Schottky junction with Al 2 O 3 interfacial layer