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Bandgap and photoluminescence (PL) energy control of epitaxially grown II–VI quantum dots (QDs) are highly desirable for applications in optoelectronic devices, yet little work has been reported. Here, we present a wide tunability of PL emission for CdTe/ZnTe QDs through an impurity-free vacancy disordering method. To induce compressive stress at the dielectric layer/ZnTe interface, a SiO 2  film is deposited onto the samples, followed by rapid thermal annealing to induce atomic interdiffusion. After the heat treatment, the PL spectra of the intermixed QDs show pronounced blueshifts in peak energy as large as ∼200 meV because of the reduced bandgap renormalization and decreased quantum confinement effects in addition to the dominant atomic interdiffusion effect. In addition, we present a thorough investigation on the modified physical properties of the intermixed QDs, including their lattice structure, thermal escape energy, and carrier dynamics, through quantitative X-ray and optical characterizations.

Wide-gap photoluminescence control of quantum dots through atomic interdiffusion and bandgap renormalization