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The results of multi-angle ellipsometrical measurements of thermally evaporated Inx(As2Se3)1-x (x = 0, 0.01,0.05) films are presented. Optical parameters n and Es of thin Inx(As2Se3)1-x films show that indium atoms were incorporated into the host matrix of As2Se3 forming distinct features depending on the indium concentration. Refractive index, n, was found to decrease with the addition of In to the binary As2Se3. The real and imaginary parts of the dielectric function, ε' and ε" were also calculated from the obtained data and correlated with In concentration. It was found that e' decreases with the increase of In content while ε" increases with the increase of In content. Absorption edge is shifted towards lower photon energy with the increase of In content. As a result, the optical energy gap decreases with increasing In content. This has been correlated with the chemical character of the additive as well as with the structural and bonding aspects of the amorphous composition. Nonlinear optical constants (χ(3) and n2) were determined from linear optical parameters using semi-empirical relations in the long wavelength limit

Studies on Inx(As2Se3)1-x thin films using variable angle spectroscopic ellipsometry (VASE)

Studies on In_x(As₂Se₃)_1-x thin films using variable angle spectroscopic ellipsometry (VASE)